Transistor Material Si. High saturation current capability. Maximum Drain Source Resistance 5 Ω. Channel Type N. Maximum Power Dissipation 400 mW. Product Overview.
EMB09N03V B09N03 NChannel Logic Level Enhancement Mode Field Effect Transistor
BSS138 SOT23 N-Channel Logic Level Enhancement Mode MOSFET 50V 10pk
5 x FQP30N06 60V N-Channel Enhancement Mode Power MOSFET TO-220 P30N06
Common Mode Choke 4A,5A,10A, (2MH,5MH,10MH) Differential Mode Inductor Various
10 x 2N7000 Fast Switch N Channel MOSFET TO-92 (Pack of 10) UK Stock
Transistors BJT MOSFET Jfet 10N06 2N7000 2N2222 BC108 BC239 BC212L BC182L BC109
